- 专利标题: Semiconductor device including an active region and two layers having different stress characteristics
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申请号: US14063459申请日: 2013-10-25
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公开(公告)号: US09847389B2公开(公告)日: 2017-12-19
- 发明人: Brian A. Winstead , Vance H. Adams , Paul A. Grudowski
- 申请人: Brian A. Winstead , Vance H. Adams , Paul A. Grudowski
- 申请人地址: US TX Austin
- 专利权人: NXP USA, Inc.
- 当前专利权人: NXP USA, Inc.
- 当前专利权人地址: US TX Austin
- 主分类号: H01L21/70
- IPC分类号: H01L21/70 ; H01L29/06 ; H01L21/8234 ; H01L21/84 ; H01L27/088 ; H01L27/12 ; H01L29/78
摘要:
An integrated circuit includes a device including an active region of the device, where the active region of the device includes a channel region having a transverse and a lateral direction. The device further includes an isolation region adjacent to the active region in a traverse direction from the active region, where the isolation region includes a first region located in a transverse direction to the channel region. The isolation region further includes a second region located in a lateral direction from the first region. The first region of the isolation region is under a stress of a first type and the second region of the isolative region is one of under a lesser stress of the first type or of under a stress of a second type being opposite of the first type.