Semiconductor device including an active region and two layers having different stress characteristics
摘要:
An integrated circuit includes a device including an active region of the device, where the active region of the device includes a channel region having a transverse and a lateral direction. The device further includes an isolation region adjacent to the active region in a traverse direction from the active region, where the isolation region includes a first region located in a transverse direction to the channel region. The isolation region further includes a second region located in a lateral direction from the first region. The first region of the isolation region is under a stress of a first type and the second region of the isolative region is one of under a lesser stress of the first type or of under a stress of a second type being opposite of the first type.
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