Invention Grant
- Patent Title: Materials and methods for improved photoresist performance
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Application No.: US13542160Application Date: 2012-07-05
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Publication No.: US09851636B2Publication Date: 2017-12-26
- Inventor: Chen-Yu Liu , Ching-Yu Chang
- Applicant: Chen-Yu Liu , Ching-Yu Chang
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/016 ; G03F7/038 ; G03F7/039
Abstract:
A photosensitive material and methods of making a pattern on a substrate are disclosed. The photosensitive material includes a polymer that turns soluble to a developer solution after a chemically amplified reaction, and at least one chemical complex having a single diffusion length. The material includes at least one photo-acid generator (PAG) linked to at least one photo decomposable base (PDB) or quencher.
Public/Granted literature
- US20140011133A1 MATERIALS AND METHODS FOR IMPROVED PHOTORESIST PERFORMANCE Public/Granted day:2014-01-09
Information query
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