- 专利标题: Near-unity photoluminescence quantum yield in MoS2
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申请号: US15294707申请日: 2016-10-15
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公开(公告)号: US09852927B2公开(公告)日: 2017-12-26
- 发明人: Matin Amani , Der-Hsien Lien , Daisuke Kiriya , James Bullock , Ali Javey
- 申请人: Matin Amani , Der-Hsien Lien , Daisuke Kiriya , James Bullock , Ali Javey
- 申请人地址: US CA Oakland
- 专利权人: The Regents of the University of California
- 当前专利权人: The Regents of the University of California
- 当前专利权人地址: US CA Oakland
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/465 ; H01L31/00 ; H01L29/22 ; C09K11/00 ; H01S3/16
摘要:
Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8±0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.
公开/授权文献
- US20170110338A1 Near-Unity Photoluminescence Quantum Yield in MoS2 公开/授权日:2017-04-20