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公开(公告)号:US09852927B2
公开(公告)日:2017-12-26
申请号:US15294707
申请日:2016-10-15
申请人: Matin Amani , Der-Hsien Lien , Daisuke Kiriya , James Bullock , Ali Javey
发明人: Matin Amani , Der-Hsien Lien , Daisuke Kiriya , James Bullock , Ali Javey
CPC分类号: H01L21/465 , C09K11/00 , C09K11/01 , C09K11/681 , H01L21/02568 , H01L29/22 , H01L31/00 , H01S3/162 , Y02W30/72
摘要: Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8±0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.
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公开(公告)号:US20170110338A1
公开(公告)日:2017-04-20
申请号:US15294707
申请日:2016-10-15
申请人: Matin Amani , Der-Hsien Lien , Daisuke Kiriya , James Bullock , Ali Javey
发明人: Matin Amani , Der-Hsien Lien , Daisuke Kiriya , James Bullock , Ali Javey
IPC分类号: H01L21/465 , H01L21/02
CPC分类号: H01L21/465 , C09K11/00 , C09K11/01 , C09K11/681 , H01L21/02568 , H01L29/22 , H01L31/00 , H01S3/162 , Y02W30/72
摘要: Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8±0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.
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