Invention Grant
- Patent Title: Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts
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Application No.: US15272919Application Date: 2016-09-22
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Publication No.: US09853115B2Publication Date: 2017-12-26
- Inventor: Hiroaki Niimi , Shariq Siddiqui , Tenko Yamashita
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/768 ; H01L29/45 ; H01L29/08 ; H01L29/161 ; H01L29/417 ; H01L21/02 ; H01L21/3213 ; H01L21/285 ; H01L27/092 ; H01L23/532 ; H01L29/78
Abstract:
An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill. A second device contact is in contact with at least one of the silicon containing source and drain region of the second semiconductor device including a material stack of a titanium oxide layer and a titanium layer. The second device contact may further include a second tungsten fill.
Public/Granted literature
- US20170125535A1 HYBRID SOURCE AND DRAIN CONTACT FORMATION USING METAL LINER AND METAL INSULATOR SEMICONDUCTOR CONTACTS Public/Granted day:2017-05-04
Information query
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