- 专利标题： Method for forming a semiconductor device and a semiconductor device
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申请号： US14935830申请日： 2015-11-09
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公开(公告)号： US09853137B2公开(公告)日： 2017-12-26
- 发明人: Moriz Jelinek , Johannes Georg Laven , Helmut Oefner , Hans-Joachim Schulze , Werner Schustereder
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 优先权： DE102014116666 20141114
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/739 ; H01L21/263 ; H01L21/324 ; H01L21/66 ; H01L29/10 ; H01L29/36
摘要：
A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.
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