In some embodiments, a semiconductor device includes a first die, a second die coupled to a first surface of the first die, and a third die coupled to the first surface of the first die. The semiconductor device further includes an underfill material disposed between the first die and the second die and between the first die and the third die. A first volume of the underfill material for the second die is different than a second volume of the underfill material for the third die.