- 专利标题: Semiconductor structure and method for manufacturing a semiconductor structure
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申请号: US14442240申请日: 2013-11-27
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公开(公告)号: US09864134B2公开(公告)日: 2018-01-09
- 发明人: Lukas Czornomaz , Jean Fompeyrine , Jens Hofrichter , Bert Jan Offrein , Mirja Richter
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Bryan D. Wells
- 优先权: GB1221581.0 20121130
- 国际申请: PCT/IB2013/060435 WO 20131127
- 国际公布: WO2014/083507 WO 20140605
- 主分类号: G02B6/12
- IPC分类号: G02B6/12 ; H01L27/14 ; H01L31/18
摘要:
A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.