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公开(公告)号：US11157807B2
公开(公告)日：2021-10-26
申请号：US15953438
申请日：2018-04-14
摘要： An integrated optical circuit for an optical neural network is provided. The optical circuit is configured to process a plurality of phase-encoded optical input signals and to provide a phase-encoded optical output signal depending on the phase-encoded optical input signals. The phase-encoded optical output signal emulates a neuron functionality with respect to the plurality of phase-encoded optical input signals. Such an embodied optical circuit uses the phase to encode information in the optical domain. A related method and a related design structure are further provided.
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公开(公告)号：US11042346B2
公开(公告)日：2021-06-22
申请号：US16526985
申请日：2019-07-30
发明人： Jean Fompeyrine , Youri Popoff , Stefan Abel
摘要： An artificial cochlea device for processing audio signals by electro-mechanical amplitude changes may be provided. The device comprises a micro-electro-mechanical system (MEMS) microphone comprising a membrane, an electro-mechanical feedback loop embedded in the MEMS microphone. Thereby, the electro-mechanical feedback loop comprises a piezo-electric actuator acting on the MEMS microphone by influencing the membrane's way to swing, such that an electro-mechanical amplitude change of an output signal is achieved.
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公开(公告)号：US11009727B2
公开(公告)日：2021-05-18
申请号：US16189336
申请日：2018-11-13
摘要： Aspects of the invention are directed to an electro-optical device having a layer structure including a substrate, an electrically insulating layer on top of the substrate, a bonding layer on top of the electrically insulating layer, a Pockels layer on top of the bonding layer, a waveguide core on top of the Pockels layer, and a cladding layer cladding both the waveguide core and the Pockels layer, the latter coated by the cladding layer. The Pockels layer is a layer of a crystalline first material having a Pockels coefficient between 10 pm/V and 10 000 pm/V. The waveguide core includes a second material, which can be crystalline. The device can be adapted to optically couple radiation into and/or from the waveguide core. Each of the first material and the second material has a larger refractive index than the electrically insulating layer and the cladding layer for said radiation.
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公开(公告)号：US10957854B2
公开(公告)日：2021-03-23
申请号：US16585774
申请日：2019-09-27
摘要： A tunable resistive element, comprising a first terminal, a second terminal, a dielectric layer and an intercalation layer. The dielectric layer and the intercalation layer is arranged between the first terminal and the second terminal. The dielectric layer is configured to form conductive filaments of oxygen vacancies on application of an electric field. The intercalation layer is configured to undergo a topotactic transition comprising an oxygen intercalation in combination with a change in the resistivity of the intercalation layer. A related memory device and a related neuromorphic network comprise resistive memory elements as memory cells and synapses respectively and a corresponding design structure.
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公开(公告)号：US20200302267A1
公开(公告)日：2020-09-24
申请号：US16360158
申请日：2019-03-21
摘要： Embodiment of the invention are directed to transmitting signals between neurons of a hardware-implemented, spiking neural network (or SNN). The network includes neuronal connections, each including a synaptic unit connecting a pre-synaptic neuron to a post-synaptic neuron. Spikes received from the pre-synaptic neuron of said each neuronal connection are first modulated, in frequency, based on a synaptic weight stored on said each synaptic unit, to generate post-synaptic spikes, such that a first number of spikes received from the pre-synaptic neuron are translated into a second number of post-synaptic spikes. At least some of the spikes received from the pre-synaptic neuron may, each, be translated into a train of two or more post-synaptic spikes. The post-synaptic spikes generated are subsequently transmitted to the post-synaptic neuron of said each neuronal connection. The novel approach makes it possible to obtain a higher dynamic range in the synapse output.
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公开(公告)号：US10735231B2
公开(公告)日：2020-08-04
申请号：US16225791
申请日：2018-12-19
发明人： Jean Fompeyrine , Stefan Abel
摘要： Demodulating a modulated signal. A method may include receiving a modulated signal, wherein the modulated signal is a signal modulated according to a modulation function varying faster than the signal. The modulation function is a function of the signal. The modulated signal received is demodulated with an artificial neural network system, or ANN system, which is trained to identify bit values from signal patterns as caused by the modulation function, by identifying bit values from patterns of the modulated signal received. Related modulation and demodulation systems are disclosed.
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7.发明申请公开(公告)号：US20200150467A1
公开(公告)日：2020-05-14
申请号：US16189336
申请日：2018-11-13
IPC分类号： G02F1/035
摘要： Aspects of the invention are directed to an electro-optical device having a layer structure including a substrate, an electrically insulating layer on top of the substrate, a bonding layer on top of the electrically insulating layer, a Pockels layer on top of the bonding layer, a waveguide core on top of the Pockels layer, and a cladding layer cladding both the waveguide core and the Pockels layer, the latter coated by the cladding layer. The Pockels layer is a layer of a crystalline first material having a Pockels coefficient between 10 pm/V and 10 000 pm/V. The waveguide core includes a second material, which can be crystalline. The device can be adapted to optically couple radiation into and/or from the waveguide core. Each of the first material and the second material has a larger refractive index than the electrically insulating layer and the cladding layer for said radiation.
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8.发明申请公开(公告)号：US20200020762A1
公开(公告)日：2020-01-16
申请号：US16032632
申请日：2018-07-11
发明人： Martin M. Frank , Kam-Leung Lee , Eduard A. Cartier , Vijay Narayanan , Jean Fompeyrine , Stefan Abel , Oleg Gluschenkov , Hemanth Jagannathan
摘要： A method for converting a dielectric material including a type IV transition metal into a crystalline material that includes forming a predominantly non-crystalline dielectric material including the type IV transition metal on a supporting substrate as a component of an electrical device having a scale of microscale or less; and converting the predominantly non-crystalline dielectric material including the type IV transition metal to a crystalline crystal structure by exposure to energy for durations of less than 100 milliseconds and, in some instances, less than 10 microseconds. The resultant material is fully or partially crystallized and contains a metastable ferroelectric phase such as the polar orthorhombic phase of space group Pca21 or Pmn21. During the conversion to the crystalline crystal structure, adjacently positioned components of the electrical devices are not damaged.
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公开(公告)号：US10249492B2
公开(公告)日：2019-04-02
申请号：US15166825
申请日：2016-05-27
摘要： A semiconductor substrate, comprising a first semiconductor material, is provided and an insulating layer is formed thereon; an opening is formed in the insulating layer. Thereby, a seed surface of the substrate is exposed. The opening has sidewalls and a bottom and the bottom corresponds to the seed surface of the substrate. A cavity structure is formed above the insulating layer, including the opening and a lateral growth channel extending laterally over the substrate. A matching array is grown on the seed surface of the substrate, including at least a first semiconductor matching structure comprising a second semiconductor material and a second semiconductor matching structure comprising a third semiconductor material. The compound semiconductor structure comprising a fourth semiconductor material is grown on a seed surface of the second matching structure. The first through fourth semiconductor materials are different from each other. Corresponding semiconductor structures are also included.
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公开(公告)号：US09786664B2
公开(公告)日：2017-10-10
申请号：US15040303
申请日：2016-02-10
IPC分类号： H01L21/8239 , H01L27/092 , H01L29/201 , H01L29/161 , H01L21/8238 , H01L21/02 , H01L29/66
CPC分类号： H01L27/0922 , H01L21/0206 , H01L21/823807 , H01L21/823828 , H01L21/823842 , H01L21/823857 , H01L21/8258 , H01L21/84 , H01L27/092 , H01L27/1203 , H01L29/1033 , H01L29/161 , H01L29/20 , H01L29/201 , H01L29/42364 , H01L29/4916 , H01L29/495 , H01L29/4966 , H01L29/51 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A dual gate CMOS structure including a semiconductor substrate; a first channel structure including a first semiconductor material and a second channel structure including a second semiconductor material on the substrate. The first semiconductor material including SixGe1-x where x=0 to 1 and the second semiconductor material including a group III-V compound material. A first gate stack on the first channel structure includes: a first native oxide layer as an interface control layer, the first native oxide layer comprising an oxide of the first semiconductor material; a first high-k dielectric layer; a first metal gate layer. A second gate stack on the second channel structure includes a second high-k dielectric layer; a second metal gate layer. The interface between the second channel structure and the second high-k dielectric layer is free of any native oxides of the second semiconductor material.
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