- 专利标题： High electron-mobility transistor
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申请号： US15241924申请日： 2016-08-19
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公开(公告)号： US09865720B2公开(公告)日： 2018-01-09
- 发明人: Ken Nakata
- 申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 申请人地址： JP Osaka
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka
- 代理机构： Smith, Gambrell & Russell, LLP.
- 优先权： JP2015-162602 20150820
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/66 ; H01L29/08 ; H01L29/20 ; H01L29/205
摘要：
A nitride semiconductor device is disclosed. The semiconductor device provides the GaN channel layer, the InAlN barrier layer on the GaN channel layer, and the n-type AlGaN layer on the InAlN barrier layer. The source and drain electrodes are formed on the n-type AlGaN layer, while, the gate electrode is formed directly on the InAlN barrier layer. The n-type AlGaN layer has the aluminum (Al) composition greater than 20% at the interface against the InAlN barrier layer, which is greater than the aluminum (Al) composition at the interface against the source electrode.
公开/授权文献
- US20170054015A1 HIGH ELECTRON-MOBILITY TRANSISTOR 公开/授权日：2017-02-23
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