Invention Grant
- Patent Title: Formation of copper layer structure with self anneal strain improvement
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Application No.: US14743926Application Date: 2015-06-18
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Publication No.: US09870995B2Publication Date: 2018-01-16
- Inventor: Jun-Nan Nian , Shiu-Ko Jangjian , Chi-Cheng Hung , Yu-Sheng Wang , Hung-Hsu Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L23/532
- IPC: H01L23/532 ; B32B15/01 ; H01L21/288 ; H01L21/768 ; B32B15/20
Abstract:
A copper layer structure includes a first copper layer, a second copper layer and a carbon-rich copper layer. The second copper layer is disposed over the first copper layer. The carbon-rich copper layer is sandwiched between the first copper layer and the second copper layer. A carbon concentration of the carbon-rich copper layer is greater than a carbon concentration of the first copper layer and a carbon concentration of the second copper layer.
Public/Granted literature
- US20160372421A1 FORMATION OF COPPER LAYER STRUCTURE WITH SELF ANNEAL STRAIN IMPROVEMENT Public/Granted day:2016-12-22
Information query
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