Invention Grant
- Patent Title: Metal capping process and processing platform thereof
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Application No.: US15340108Application Date: 2016-11-01
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Publication No.: US09873944B2Publication Date: 2018-01-23
- Inventor: Chih-Chien Chi , Szu-Ping Tung , Huang-Yi Huang , Ching-Hua Hsieh
- Applicant: Taiwan Semiconductor Manufacturing CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L39/00
- IPC: H01L39/00 ; C23C16/50 ; H01L21/67 ; H01L21/768 ; H01L21/02 ; C23C16/02 ; C23C16/06 ; C23C16/44 ; H01L21/285 ; H01L21/687 ; H01L23/522 ; H01L23/532
Abstract:
Before depositing a metal capping layer on a metal interconnect in a damascene structure, a remote plasma is used to reduce native oxide formed on the metal interconnect. Accordingly, a remote plasma reducing chamber is integrated in a processing platform for depositing a metal capping layer.
Public/Granted literature
- US20170044668A1 Metal Capping Process And Processing Platform Thereof Public/Granted day:2017-02-16
Information query
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