Invention Grant
- Patent Title: Charged particle beam device and charged particle beam device control method
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Application No.: US15023456Application Date: 2014-10-07
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Publication No.: US09881769B2Publication Date: 2018-01-30
- Inventor: Kenji Aoki , Tsutomu Saitou , Kotaro Hosoya , Mitsuhiro Nakamura , Kunji Shigeto
- Applicant: Hitachi High-Technologies Corporation
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2013-211223 20131008
- International Application: PCT/JP2014/076799 WO 20141007
- International Announcement: WO2015/053262 WO 20150416
- Main IPC: H01J37/28
- IPC: H01J37/28 ; H01J37/29 ; H01J37/073 ; H01J37/244

Abstract:
The objective of the present invention is to provide a charged particle beam device, wherein the positional relationship between reflected electron detection elements and a sample and the vacuum state of the sample surroundings are evaluated to select automatically a reflected electron detection element appropriate for acquiring an intended image. In this charged particle beam device, all the reflected electron detection elements are selected when the degree of vacuum inside the sample chamber is high and the sample is distant from the reflected electron detectors, while a reflected electron detection element appropriate for acquiring a compositional image or a height map image is selected when the degree of vacuum inside the sample chamber is high and the sample is close to the reflected electron detectors. When the degree of vacuum inside the sample chamber is low, all the reflected electron detection elements are selected.
Public/Granted literature
- US20160203947A1 Charged Particle Beam Device and Charged Particle Beam Device Control Method Public/Granted day:2016-07-14
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