Invention Grant
- Patent Title: Method of preventing charge accumulation in manufacture of semiconductor device
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Application No.: US13783466Application Date: 2013-03-04
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Publication No.: US09881785B2Publication Date: 2018-01-30
- Inventor: Young-geun Roh , Un-jeong Kim , Chang-won Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2012-0091469 20120821
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/263 ; H01L21/28 ; H01L21/311 ; H01J37/02

Abstract:
A method of preventing a charge accumulation in the manufacturing process of a semiconductor device is provided. The method includes: forming a material layer on a substrate; patterning (or processing) the material layer; and forming a graphene layer before patterning the material layer, wherein the graphene layer is formed on a surface of the material layer or on a surface of the substrate under the material layer. The substrate may be an insulation substrate. In addition, the substrate may have a stacked structure including a plurality of layers.
Public/Granted literature
- US20140057451A1 METHOD OF PREVENTING CHARGE ACCUMULATION IN MANUFACTURE OF SEMICONDUCTOR DEVICE Public/Granted day:2014-02-27
Information query
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