Invention Grant
- Patent Title: Semiconductor module
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Application No.: US15491028Application Date: 2017-04-19
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Publication No.: US09881852B2Publication Date: 2018-01-30
- Inventor: Mitsunori Kimura , Hiroshi Shimizu , Kengo Mochiki , Yasuyuki Ohkouchi , Yuu Yamahira , Tetsuya Matsuoka , Kazuma Fukushima
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Oliff PLC
- Priority: JP2016-083935 20160419
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L23/31 ; H01L23/495 ; H01L25/00 ; H01L25/07 ; H01L25/16 ; H01L23/00 ; H01L27/06 ; H02M7/537 ; H02P27/06
Abstract:
A semiconductor module of an electric power converter includes an IGBT and a MOSFET which are connected in parallel to each other and provided on the same lead frame, either one of the IGBT and the MOSFET is a first switching element and the remaining one is a second switching element, and the conduction path of the second switching element is disposed at a position that is separated from a conduction path of the first switching element in the same lead frame.
Public/Granted literature
- US20170301614A1 SEMICONDUCTOR MODULE Public/Granted day:2017-10-19
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