公开(公告)号：US10135437B2

公开(公告)日：2018-11-20

申请号：US15819178

申请日：2017-11-21

Applicant: DENSO CORPORATION

Inventor： Hiroshi Shimizu ,  Kazuma Fukushima

IPC: H03K17/567 ,  H03K17/04 ,  H03K17/14 ,  H02M1/088 ,  H02M3/156 ,  H02M1/08 ,  H02M1/32

Abstract: Parallely connected first and second switches respectively have first and second on resistances. The second on resistance is higher than the first on resistance in a lower range of current, and lower than the first on resistance in a higher range of current. A current obtaining unit obtains a current parameter indicative of an input current flowing through both the first and second switches. A low-current control unit controls, based on the obtained current parameter, switching operations of the first and second switches to correspondingly increase the number of times of turn-on of the first switch relative to the number of times of turn-on of the second switch, and prevent simultaneous turn-on of the first and second switches while a value of the input current is located within a predetermined low-level current region, the low-level current region being lower than the threshold current.

公开(公告)号：US10103723B2

公开(公告)日：2018-10-16

申请号：US15815202

申请日：2017-11-16

Applicant: DENSO CORPORATION

Inventor： Hiroshi Shimizu ,  Kengo Mochiki ,  Yuu Yamahira ,  Tetsuya Matsuoka ,  Kazuma Fukushima ,  Mitsunori Kimura ,  Yasuyuki Ohkouchi

IPC: H03K17/14 ,  H03K17/0412 ,  H03K17/12 ,  H03K17/082 ,  H03K17/16 ,  H02M1/00 ,  H03K17/08

Abstract: In a driving apparatus for switches connected in parallel to each other, drivers respectively turn on or off the switches. A temperature obtainer obtains a value of a temperature parameter correlating with a temperature of at least one of the first and second switches. A selector selects at least one of the switches as at least one drive target switch. A driver causes at least one of the drivers to turn on the at least one drive target switch during an on duration and thereafter turn off the at least one drive target switch in each target switching cycle. The selector adjusts the number of the selected at least one drive target switch based on the value of the temperature parameter.

公开(公告)号：US09881852B2

公开(公告)日：2018-01-30

申请号：US15491028

申请日：2017-04-19

Applicant: DENSO CORPORATION

Inventor： Mitsunori Kimura ,  Hiroshi Shimizu ,  Kengo Mochiki ,  Yasuyuki Ohkouchi ,  Yuu Yamahira ,  Tetsuya Matsuoka ,  Kazuma Fukushima

IPC: H01L23/12 ,  H01L23/31 ,  H01L23/495 ,  H01L25/00 ,  H01L25/07 ,  H01L25/16 ,  H01L23/00 ,  H01L27/06 ,  H02M7/537 ,  H02P27/06

CPC classification number: H01L23/49568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/4012 ,  H01L23/473 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/32 ,  H01L25/07 ,  H01L27/0623 ,  H01L2224/32245 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M1/088 ,  H02M7/003 ,  H02M7/537 ,  H02M2001/327 ,  H02P27/06

Abstract: A semiconductor module of an electric power converter includes an IGBT and a MOSFET which are connected in parallel to each other and provided on the same lead frame, either one of the IGBT and the MOSFET is a first switching element and the remaining one is a second switching element, and the conduction path of the second switching element is disposed at a position that is separated from a conduction path of the first switching element in the same lead frame.

公开(公告)号：US10050512B2

公开(公告)日：2018-08-14

申请号：US15491366

申请日：2017-04-19

Applicant: DENSO CORPORATION

Inventor： Kengo Mochiki ,  Mitsunori Kimura ,  Hiroshi Shimizu ,  Yasuyuki Ohkouchi ,  Yuu Yamahira ,  Tetsuya Matsuoka ,  Kazuma Fukushima

IPC: H02M1/088 ,  H01L27/06 ,  H02M3/158 ,  H02M7/537 ,  H03K17/081 ,  H03K17/0412 ,  H03K17/687 ,  H02P27/06 ,  H03K17/12

Abstract: A power conversion apparatus includes a semiconductor module including a semiconductor device and a control circuit unit controlling the semiconductor module. The semiconductor module has main and subsidiary semiconductor devices connected in parallel. The control circuit unit performs control such that the subsidiary semiconductor device is turned on after the main semiconductor device is turned on, and the main semiconductor device is turned off after the subsidiary semiconductor device is turned off. The control circuit unit performs control such that, one of the turn-on and turn-off switching timings has a switching speed faster than that of the other of the switching timings. The semiconductor module is configured such that, at a high-speed switching timing, an induction current directed to turn off the subsidiary semiconductor device is generated in a control terminal of the subsidiary semiconductor device depending on temporal change of a main current flowing to the main semiconductor device.

公开(公告)号：US20180145683A1

公开(公告)日：2018-05-24

申请号：US15819178

申请日：2017-11-21

Applicant: Denso Corporation

Inventor： Hiroshi Shimizu ,  Kazuma Fukushima

IPC: H03K17/567 ,  H03K17/04 ,  H03K17/14

CPC classification number: H03K17/567 ,  H02M1/08 ,  H02M1/088 ,  H02M3/156 ,  H02M2001/327 ,  H03K17/0406 ,  H03K17/06 ,  H03K17/14 ,  H03K17/168 ,  H03K2217/0036

Abstract: Parallely connected first and second switches respectively have first and second on resistances. The second on resistance is higher than the first on resistance in a lower range of current, and lower than the first on resistance in a higher range of current. A current obtaining unit obtains a current parameter indicative of an input current flowing through both the first and second switches. A low-current control unit controls, based on the obtained current parameter, switching operations of the first and second switches to correspondingly increase the number of times of turn-on of the first switch relative to the number of times of turn-on of the second switch, and prevent simultaneous turn-on of the first and second switches while a value of the input current is located within a predetermined low-level current region, the low-level current region being lower than the threshold current.

公开(公告)号：US11303145B2

公开(公告)日：2022-04-12

申请号：US16710124

申请日：2019-12-11

Applicant: DENSO CORPORATION

Inventor： Hiroshi Shimizu ,  Ryuji Omata ,  Daigo Nobe ,  Makoto Nakamura

IPC: H02J7/00 ,  H02J7/34

Abstract: A charging system charges a first voltage source and a second voltage source through an external charger. The first voltage source and the second voltage source are capable of supplying electric power to a rotating electric machine that includes a coil group configured by multiphase coils. The charging system includes a first inverter, a second inverter, at least three switches, and a control unit. The first inverter includes a first switching element. The second inverter includes a second switching element. The control unit is capable of switching charging between individual charging in which either of the first voltage source and the second voltage source is charged, and simultaneous charging in which the first voltage source and the second voltage source are both simultaneously charged, by controlling operations of the first switching element, the second switching element, and the switches.

公开(公告)号：US09973070B2

公开(公告)日：2018-05-15

申请号：US14044121

申请日：2013-10-02

Applicant: DENSO CORPORATION

Inventor： Hiroshi Shimizu ,  Naoki Hirasawa

IPC: H05K7/00 ,  H02M1/00 ,  H05K7/20 ,  H02M7/00

CPC classification number: H02M1/00 ,  H01L2924/0002 ,  H02M7/003 ,  H02M2001/007 ,  H05K7/20254 ,  H05K7/2089 ,  H05K7/20927 ,  H01L2924/00

Abstract: An electric power converter includes a stacked body in which a plurality of semiconductor modules and a plurality of coolers are stacked. Each of the semiconductor modules is provided with a main body that has semiconductor elements therein, a plurality of power terminals, and control terminals. Among the plurality of the power terminals respectively included in the two semiconductor modules adjoining in a stacking direction of the stacked body, at least parts of the power terminals are configured so as not to overlap each other when viewed from the stacking direction.

公开(公告)号：US11050314B2

公开(公告)日：2021-06-29

申请号：US16423737

申请日：2019-05-28

Applicant: DENSO CORPORATION

Inventor： Yoshimitsu Takahashi ,  Mitsutaka Ito ,  Hiroshi Shimizu ,  Takeshi Endo

IPC: H02K3/28 ,  H02K3/04 ,  H02K11/33 ,  H02K1/16 ,  H02K1/27 ,  H02K7/00 ,  H02K21/14 ,  H02K3/34 ,  H02K3/14 ,  H02M7/49 ,  B60K6/26

Abstract: In a rotating electric machine, a stator includes a stator core and three phase windings. In the stator core, a plurality of slots arrayed in a circumferential direction are formed. The three phase windings are wound around the stator core. The three phase windings include first, second, and third windings. One end of the first winding is provided further towards an outer side of the stator in a radial direction than a division line that divides the slot into two in the radial direction of the stator. One end of the second winding is provided further towards an inner side of the stator in the radial direction than the division line. One end of the third winding is provided between the one end of the first winding and the one end of the second winding relative to the radial direction of the stator, with at least a single slot therebetween.

公开(公告)号：US10424570B2

公开(公告)日：2019-09-24

申请号：US15488818

申请日：2017-04-17

Applicant: DENSO CORPORATION

Inventor： Mitsunori Kimura ,  Hiroshi Shimizu ,  Kengo Mochiki ,  Yasuyuki Ohkouchi ,  Yuu Yamahira ,  Tetsuya Matsuoka ,  Kazuma Fukushima

IPC: H01L25/18 ,  H01L23/473 ,  H01L23/495 ,  H01L25/07 ,  H01L25/11 ,  H05K7/20 ,  H05K1/02 ,  H01L23/433 ,  H01L23/40 ,  H01L23/00

Abstract: A power conversion apparatus performs power conversion. The power conversion apparatus includes a semiconductor module and a cooler. The semiconductor module includes an insulated-gate bipolar transistor, a metal-oxide-semiconductor field-effect transistor, and a lead frame. The insulated-gate bipolar transistor and the metal-oxide-semiconductor field-effect transistor are connected in parallel to each other and provided on the same lead frame. The cooler has a coolant flow passage. The coolant flow passage extends such that the coolant flow passage and the lead frame of the semiconductor module are opposed to each other. The semiconductor module is configured such that the metal-oxide-semiconductor field-effect transistor is not disposed further downstream than the insulated-gate bipolar transistor in a flow direction of a coolant in the coolant flow passage of the cooler.

公开(公告)号：US10396651B2

公开(公告)日：2019-08-27

申请号：US16046278

申请日：2018-07-26

Applicant: DENSO CORPORATION

Inventor： Kengo Mochiki ,  Mitsunori Kimura ,  Hiroshi Shimizu ,  Yasuyuki Ohkouchi ,  Yuu Yamahira ,  Tetsuya Matsuoka ,  Kazuma Fukushima

IPC: H02M1/088 ,  H01L27/06 ,  H02M3/158 ,  H02M7/537 ,  H03K17/081 ,  H03K17/0412 ,  H03K17/687 ,  H02M1/08 ,  H02M7/00 ,  H02M7/5387 ,  B60L3/00 ,  B60L15/00 ,  H02P27/06 ,  H03K17/12 ,  H02M1/00 ,  H02P27/08

Abstract: A power conversion apparatus includes a semiconductor module including a semiconductor device and a control circuit unit controlling the semiconductor module. The semiconductor module has main and subsidiary semiconductor devices connected in parallel. The control circuit unit performs control such that the subsidiary semiconductor device is turned on after the main semiconductor device is turned on, and the main semiconductor device is turned off after the subsidiary semiconductor device is turned off. The control circuit unit performs control such that, one of the turn-on and turn-off switching timings has a switching speed faster than that of the other of the switching timings. The semiconductor module is configured such that, at a high-speed switching timing, an induction current directed to turn off the subsidiary semiconductor device is generated in a control terminal of the subsidiary semiconductor device depending on temporal change of a main current flowing to the main semiconductor device.