Invention Grant
- Patent Title: Methods of adjusting flatband voltage of a memory device
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Application No.: US15098605Application Date: 2016-04-14
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Publication No.: US09881932B2Publication Date: 2018-01-30
- Inventor: Roy Meade
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C11/34
- IPC: G11C11/34 ; H01L27/11568 ; H01L29/423 ; H01L29/51 ; H01L29/792 ; H01L21/02 ; H01L27/115 ; H01L21/28 ; H01L21/326 ; H01L27/11521 ; H01L29/788 ; H01L29/78
Abstract:
Methods for adjusting a flatband voltage of a memory device, including applying a voltage to a control gate of the memory device such that charged species are moved to one of a plurality of different levels in a dielectric material in response to the voltage, wherein the plurality of different levels is greater than two.
Public/Granted literature
- US20160225782A1 METHODS OF ADJUSTING FLATBAND VOLTAGE OF A MEMORY DEVICE Public/Granted day:2016-08-04
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