Invention Grant
- Patent Title: Silicon germanium fin channel formation
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Application No.: US15340624Application Date: 2016-11-01
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Publication No.: US09882006B2Publication Date: 2018-01-30
- Inventor: Hong He , Nicolas Loubet , Junli Wang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , STMicroelectronics, Inc.
- Applicant Address: US NY Armonk US TX Coppell
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.
- Current Assignee Address: US NY Armonk US TX Coppell
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/161 ; H01L29/66 ; H01L21/225 ; H01L21/311 ; H01L21/02 ; H01L29/78 ; H01L29/167
Abstract:
A method for channel formation in a fin transistor includes removing a dummy gate and dielectric from a dummy gate structure to expose a region of an underlying fin and depositing an amorphous layer including Ge over the region of the underlying fin. The amorphous layer is oxidized to condense out Ge and diffuse the Ge into the region of the underlying fin to form a channel region with Ge in the fin.
Public/Granted literature
- US20170047406A1 SILICON GERMANIUM FIN CHANNEL FORMATION Public/Granted day:2017-02-16
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