Invention Grant
- Patent Title: Epitaxial and silicide layer formation at top and bottom surfaces of semiconductor fins
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Application No.: US15361994Application Date: 2016-11-28
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Publication No.: US09882024B2Publication Date: 2018-01-30
- Inventor: Kangguo Cheng , Zuoguang Liu , Ruilong Xie , Tenko Yamashita
- Applicant: International Business Machines Corporation , GlobalFoundries, Inc.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES, INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES, INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/08 ; H01L29/417 ; H01L21/8234 ; H01L29/78 ; H01L29/06 ; H01L21/02 ; H01L21/285 ; H01L21/324 ; H01L29/45 ; H01L27/088 ; H01L29/161 ; H01L29/165 ; H01L29/24 ; H01L29/267
Abstract:
A method of making a semiconductor device includes forming a fin in a substrate; depositing a first spacer material to form a first spacer around the fin; depositing a second spacer material to form a second spacer over the first spacer; recessing the first spacer and the second spacer; removing the first spacer; and performing an epitaxial growth process to form epitaxial growth on an end of the fin, along a sidewall of the fin, and adjacent to the fin.
Public/Granted literature
- US20170077266A1 EPITAXIAL AND SILICIDE LAYER FORMATION AT TOP AND BOTTOM SURFACES OF SEMICONDUCTOR FINS Public/Granted day:2017-03-16
Information query
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