- 专利标题： Semiconductor device
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申请号： US14571981申请日： 2014-12-16
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公开(公告)号： US09882059B2公开(公告)日： 2018-01-30
- 发明人: Shunpei Yamazaki , Akihisa Shimomura , Yuhei Sato , Yasumasa Yamane , Yoshitaka Yamamoto , Hideomi Suzawa , Tetsuhiro Tanaka , Yutaka Okazaki , Naoki Okuno , Takahisa Ishiyama
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2013-262873 20131219
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/417
摘要：
To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.
公开/授权文献
- US20150179803A1 SEMICONDUCTOR DEVICE 公开/授权日：2015-06-25
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