Invention Grant
- Patent Title: Semiconductor structures having T-shaped electrodes
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Application No.: US15285782Application Date: 2016-10-05
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Publication No.: US09887089B2Publication Date: 2018-02-06
- Inventor: Kiuchul Hwang , Dale M. Shaw , Adrian D. Williams
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/033 ; H01L21/768 ; H01L51/00 ; H01L21/285 ; H01L29/423 ; H01L21/283
Abstract:
A semiconductor structure having a T-shaped electrode. The electrode has a top portion and a narrower stem portion extending from the top portion to a surface of a substrate. A solid dielectric layer has side portions juxtaposed and abutting sidewalls of a lower portion of the stem of electrode. A bottom surface of the top portion is spaced from an upper surface portion by a non-solid dielectric, such as air.
Public/Granted literature
- US20170025278A1 Semiconductor Structures Having T-Shaped Electrodes Public/Granted day:2017-01-26
Information query
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