Invention Grant
- Patent Title: IC with insulating trench and related methods
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Application No.: US14565934Application Date: 2014-12-10
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Publication No.: US09887165B2Publication Date: 2018-02-06
- Inventor: Alberto Pagani , Giovanni Girlando , Federico Giovanni Ziglioli , Alessandro Finocchiaro
- Applicant: STMICROELECTRONICS S.r.l.
- Applicant Address: IT Agrate Brianza (MB)
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza (MB)
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/58 ; G01R31/28 ; H01L21/66

Abstract:
An IC may include a semiconductor substrate having circuitry formed in the substrate, an interconnect layer above the semiconductor substrate and having an antenna coupled to the circuitry, and a seal ring around a periphery of the interconnect layer. The IC may include an electrically insulating trench extending vertically into the semiconductor substrate and extending laterally across the semiconductor substrate from adjacent one side to adjacent another side.
Public/Granted literature
- US20160172311A1 IC WITH INSULATING TRENCH AND RELATED METHODS Public/Granted day:2016-06-16
Information query
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