Invention Grant
- Patent Title: Integrated circuit device and method of manufacturing the same
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Application No.: US15377723Application Date: 2016-12-13
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Publication No.: US09899323B2Publication Date: 2018-02-20
- Inventor: Ho-jun Seong , Jae-hwang Sim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2016-0049393 20160422
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L23/00 ; H01L23/528

Abstract:
An integrated circuit device includes a first conductive line and a second conductive line that are spaced apart from each other and extend in a first direction to be parallel to each other; and a contact pad including a pad body including a first branch portion from which the first conductive line branches and a second branch portion from which the second conductive line branches and a loop branch portion that is located between the first branch portion and the second branch portion and protrudes from the pad body. Related devices and fabrication methods are also discussed.
Public/Granted literature
- US20170309568A1 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-10-26
Information query
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