Invention Grant
- Patent Title: Method for forming crack-stopping structures
-
Application No.: US15219272Application Date: 2016-07-25
-
Publication No.: US09899333B2Publication Date: 2018-02-20
- Inventor: Kuang-Hui Tang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/10 ; H01L31/00 ; H01L23/544 ; H01L23/00 ; H01L21/762 ; H01L23/58 ; H01L21/784 ; H01L23/48 ; H01L21/56 ; H01L21/768 ; H01L23/522 ; H01L21/66 ; H01L21/78
Abstract:
A crack-stopping structure includes a semiconductor wafer comprising a plurality of dies defined by a plurality of scribe line regions, a plurality of metal patterns formed in the scribe line regions, and a plurality of groups of through silicon holes (TSHs) formed in the scribe line regions. The wafer further includes a front side and a back side, and the TSHs respectively include at least a bottom opening formed in the bottom side of the wafer. The groups of TSHs are formed between the metal patterns and the dies.
Public/Granted literature
- US20160336274A1 METHOD FOR FORMING CRACK-STOPPING STRUCTURES Public/Granted day:2016-11-17
Information query
IPC分类:
