- 专利标题： Methods of forming silicon germanium tin films and structures and devices including the films
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申请号： US14956115申请日： 2015-12-01
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公开(公告)号： US09905420B2公开(公告)日： 2018-02-27
- 发明人: Joe Margetis , John Tolle
- 申请人： ASM IP Holding B.V.
- 申请人地址： NL AP Almere
- 专利权人： ASM IP Holding B.V.
- 当前专利权人： ASM IP Holding B.V.
- 当前专利权人地址： NL AP Almere
- 代理机构： Snell & Wilmer L.L.P.
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/36 ; H01L21/02 ; H01L29/161 ; H01L29/165
摘要：
Methods of forming silicon germanium tin (SixGe1-xSny) films are disclosed. Exemplary methods include growing films including silicon, germanium and tin in an epitaxial chemical vapor deposition reactor. Exemplary methods are suitable for high volume manufacturing. Also disclosed are structures and devices including silicon germanium tin films.
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