公开(公告)号：US11374112B2

公开(公告)日：2022-06-28

申请号：US16000125

申请日：2018-06-05

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/285 ,  H01L29/78 ,  H01L29/167 ,  H01L29/08 ,  H01L23/535 ,  H01L29/165 ,  H01L29/45 ,  H01L29/161

Abstract: A method for depositing a Group IV semiconductor is disclosed. The method may include, providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The methods may further include, exposing the substrate to at least one Group IV precursor and exposing the substrate to at least one Group IIIA metalorganic dopant precursor. The methods may further include depositing a Group IV semiconductor on a surface of the substrate. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.

公开(公告)号：US20210358741A1

公开(公告)日：2021-11-18

申请号：US17317965

申请日：2021-05-12

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Peter Westrom ,  Joe Margetis ,  Xin Sun ,  Caleb Miskin ,  Yen Lin Leow ,  Yanfu Lu

IPC: H01L21/02 ,  C30B25/18 ,  C30B25/16 ,  C30B29/52 ,  C23C16/08 ,  C23C16/455 ,  C23C16/52

Abstract: A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

公开(公告)号：US20200224309A1

公开(公告)日：2020-07-16

申请号：US16816078

申请日：2020-03-11

Applicant: ASM IP Holding B.V.

Inventor： Sonti Sreeram ,  John Tolle ,  Joe Margetis ,  Junwei Su

IPC: C23C16/455

Abstract: A flange, flange assembly, and reactor system including the flange and flange assembly are disclosed. An exemplary flange assembly includes heated and cooled sections to independently control temperatures of sections of the flange. Methods of using the flange, flange assembly and reactor system are also disclosed.

公开(公告)号：US10262859B2

公开(公告)日：2019-04-16

申请号：US15863340

申请日：2018-01-05

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle ,  Gregory Bartlett ,  Nupur Bhargava

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/24

Abstract: A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.

公开(公告)号：US20190027583A1

公开(公告)日：2019-01-24

申请号：US16000125

申请日：2018-06-05

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/165 ,  H01L29/167 ,  H01L29/08 ,  H01L29/45 ,  H01L23/535 ,  H01L21/02 ,  H01L21/285

Abstract: A method for depositing a Group IV semiconductor is disclosed. The method may include, providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The methods may further include, exposing the substrate to at least one Group IV precursor and exposing the substrate to at least one Group IIIA metalorganic dopant precursor. The methods may further include depositing a Group IV semiconductor on a surface of the substrate. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.

公开(公告)号：US11168395B2

公开(公告)日：2021-11-09

申请号：US16816078

申请日：2020-03-11

Applicant: ASM IP Holding B.V.

Inventor： Sonti Sreeram ,  John Tolle ,  Joe Margetis ,  Junwei Su

IPC: C23C16/455

Abstract: A flange, flange assembly, and reactor system including the flange and flange assembly are disclosed. An exemplary flange assembly includes heated and cooled sections to independently control temperatures of sections of the flange. Methods of using the flange, flange assembly and reactor system are also disclosed.

公开(公告)号：US10446393B2

公开(公告)日：2019-10-15

申请号：US15957565

申请日：2018-04-19

Applicant: ASM IP Holding B.V.

Inventor： Nupur Bhargava ,  John Tolle ,  Joe Margetis ,  Matthew Goodman ,  Robert Vyne

IPC: H01L21/02 ,  H01L29/66 ,  C30B29/10 ,  C30B25/10 ,  C30B25/02 ,  C30B29/06 ,  C30B29/52

Abstract: A method for forming a silicon-containing epitaxial layer is disclosed. The method may include, heating a substrate to a temperature of less than approximately 950° C. and exposing the substrate to a first silicon source comprising a hydrogenated silicon source, a second silicon source, a dopant source, and a halogen source. The method may also include depositing a silicon-containing epitaxial layer wherein the dopant concentration within the silicon-containing epitaxial layer is greater than 3×1021 atoms per cubic centimeter.

公开(公告)号：US10388509B2

公开(公告)日：2019-08-20

申请号：US15627189

申请日：2017-06-19

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle

IPC: H01L21/02 ,  H01L29/161 ,  H01L21/67 ,  H01L21/768

Abstract: A process for forming a thick defect-free epitaxial layer is disclosed. The process may comprise forming a buffer layer and a sacrificial layer prior to forming the thick defect-free epitaxial layer. The sacrificial layer and the thick defect-free epitaxial layer may be formed of the same material and at the same process conditions.

公开(公告)号：US20190027584A1

公开(公告)日：2019-01-24

申请号：US16000156

申请日：2018-06-05

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/165 ,  H01L29/167 ,  H01L29/08 ,  H01L29/45 ,  H01L23/535 ,  H01L21/02 ,  H01L21/285

Abstract: A method for selectively depositing a Group IV semiconductor on a surface of a substrate is disclosed. The method may include, providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The method may further include, exposing the substrate to at least one Group IV precursor, and exposing the substrate to at least one Group IIIA halide dopant precursor. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.

公开(公告)号：US20170372884A1

公开(公告)日：2017-12-28

申请号：US15627189

申请日：2017-06-19

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/768

CPC classification number: H01L21/02005 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02502 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0262 ,  H01L21/67167 ,  H01L21/7688 ,  H01L29/161

Abstract: A process for forming a thick defect-free epitaxial layer is disclosed. The process may comprise forming a buffer layer and a sacrificial layer prior to forming the thick defect-free epitaxial layer. The sacrificial layer and the thick defect-free epitaxial layer may be formed of the same material and at the same process conditions.