- 专利标题： Improving channel strain and controlling lateral epitaxial growth of the source and drain in FinFET devices
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申请号： US15221758申请日： 2016-07-28
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公开(公告)号： US09905421B2公开(公告)日： 2018-02-27
- 发明人: Injo Ok , Balasubramanian Pranatharthiharan , Soon-cheon Seo , Charan Veera Venkata Satya Surisetty
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Adolph Bohnstedt
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/78 ; H01L29/161 ; H01L29/08 ; H01L29/66
摘要：
A multi-gate finFET structure and formation thereof. The multi-gate finFET structure has a first gate structure that includes an inner side and an outer side. Adjacent to the first gate structure is a second gate structure. The inner side of the first gate structure faces, at least in part, the second gate structure. A stress-inducing material fills a fin cut trench that is adjacent to the outer side of the first gate structure. An epitaxial semiconductor layer fills, at least in part, an area between the first gate structure and the second gate structure.
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