Invention Grant
- Patent Title: Forming a gate contact in the active area
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Application No.: US14829843Application Date: 2015-08-19
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Publication No.: US09905671B2Publication Date: 2018-02-27
- Inventor: Kangguo Cheng , Ruilong Xie , Tenko Yamashita
- Applicant: International Business Machines Corporation , GlobalFoundries, Inc.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES, INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES, INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/768 ; H01L29/78 ; H01L29/417 ; H01L21/02 ; H01L21/28

Abstract:
A method of making a semiconductor device includes patterning a fin in a substrate; forming a gate between source/drain regions over the substrate, the gate having a dielectric spacer along a sidewall; removing a portion of the dielectric spacer and filling with a metal oxide to form a spacer having a first spacer portion and a second spacer portion; forming a source/drain contact over at least one of the source/drain regions; recessing the source/drain contact and forming a via contact over the source/drain contact; and forming a gate contact over the gate, the gate contact having a first gate contact portion contacting the gate and a second gate contact portion positioned over the first gate contact portion; wherein the first spacer portion isolates the first gate contact portion from the source/drain contact, and the second spacer portion isolates the second gate contact portion from the source/drain contact.
Public/Granted literature
- US20170053997A1 FORMING A GATE CONTACT IN THE ACTIVE AREA Public/Granted day:2017-02-23
Information query
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