Invention Grant
- Patent Title: Method of forming opening pattern
-
Application No.: US15188621Application Date: 2016-06-21
-
Publication No.: US09917007B2Publication Date: 2018-03-13
- Inventor: Yi-Yu Wu , Bin-Siang Tsai
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/311 ; H01L21/033

Abstract:
A method of forming an opening pattern including the following steps is provided. An ultra low dielectric constant layer, a dielectric hard mask layer and a patterned metal hard mask layer are sequentially formed on a substrate. A portion of the dielectric hard mask layer is removed to form a patterned dielectric hard mask layer by using the patterned metal hard mask layer as a mask. The patterned metal hard mask layer is removed after forming the patterned dielectric hard mask layer. A portion of the ultra low dielectric constant layer is removed to form a first opening by using the patterned dielectric hard mask layer as a mask.
Public/Granted literature
- US20170365510A1 METHOD OF FORMING OPENING PATTERN Public/Granted day:2017-12-21
Information query
IPC分类: