Invention Grant
- Patent Title: 2.5D microelectronic assembly and method with circuit structure formed on carrier
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Application No.: US15147099Application Date: 2016-05-05
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Publication No.: US09917042B2Publication Date: 2018-03-13
- Inventor: Belgacem Haba , Sean Moran
- Applicant: Invensas Corporation
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L23/00 ; H01L21/78 ; H01L25/10 ; H01L21/56 ; H01L21/683 ; H01L23/31 ; H01L23/367 ; H01L25/065 ; H01L25/16 ; H01L25/18 ; H01L23/04 ; H01L25/00

Abstract:
A dielectric element has a plurality of contacts at a first surface and a plurality of first traces coupled thereto which extend in directions parallel to the first surface. A circuit structure made of a plurality of dielectric layers and electrically conductive features thereon includes a plurality of bumps at a first surface which face the contacts of the dielectric element and are joined thereto. Circuit structure contacts at a second surface opposite the first surface are electrically coupled with the bumps through second traces on the circuit structure, the circuit structure contacts configured for connection with a plurality of element contacts of each of a plurality of microelectronic elements, wherein the microelectronic elements can be assembled therewith such that element contacts thereof face and are joined with the circuit structure contacts.
Public/Granted literature
- US20160329300A1 NEW 2.5D MICROELECTRONIC ASSEMBLY AND METHOD WITH CIRCUIT STRUCTURE FORMED ON CARRIER Public/Granted day:2016-11-10
Information query
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