- 专利标题： Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
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申请号： US14873863申请日： 2015-10-02
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公开(公告)号： US09917107B2公开(公告)日： 2018-03-13
- 发明人: Koji Ono , Hideomi Suzawa
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Husch Blackwell LLP
- 优先权： JP2001-227047 20010727
- 主分类号： H01L27/14
- IPC分类号： H01L27/14 ; H01L29/04 ; H01L29/15 ; H01L31/036 ; H01L27/12 ; C23F4/00 ; H01L21/3213 ; H01L21/768 ; H01B1/02 ; H01B5/14 ; H01B13/00 ; H01L29/423 ; H01L29/45 ; H01L29/49
摘要：
A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.
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