Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US15238721Application Date: 2016-08-16
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Publication No.: US09917161B2Publication Date: 2018-03-13
- Inventor: Jungwoo Song , Jaekyu Lee , Jaerok Kahng , YongJun Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2015-0122901 20150831
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/40 ; H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L27/22

Abstract:
A semiconductor device includes active pillars protruding from a semiconductor substrate and spaced apart from each other in a first direction and a second direction that is perpendicular to the first direction, a word line extending in the first direction between the active pillars, a drain region disposed in an upper portion of each of the active pillars, and a separation pattern provided between the word line and the drain region. A bottom surface of the separation pattern is disposed at a lower level than a bottom surface of the drain region.
Public/Granted literature
- US20170062575A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2017-03-02
Information query
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