Invention Grant
- Patent Title: Semiconductor memory device having a plurality of mosfets controlled to be in an active state or a standby state
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Application No.: US14484998Application Date: 2014-09-12
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Publication No.: US09922698B2Publication Date: 2018-03-20
- Inventor: Masanao Yamaoka , Kenichi Osada , Kazumasa Yanagisawa
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2002-371751 20021224
- Main IPC: G11C11/417
- IPC: G11C11/417 ; G11C5/14

Abstract:
A semiconductor integrated circuit device has a memory array including SRAM cells, a plurality of sense amplifiers for reading out data stored in the SRAM cells and a plurality of MOSFETS. The MOSFETs are controlled by a control signal to be in one of an active state or a standby state. Part of the MOSFETs are arranged along one end of the memory array and the other parts of the MOSFETs are arranged along another end of the memory array. The other end of the memory array is opposite to the one end of the memory array. The MOSFETs are controlled by the control signal to be turned ON in the active state and to be turned OFF in the standby mode.
Public/Granted literature
- US20150049541A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2015-02-19
Information query
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