Invention Grant
- Patent Title: Dual exposure patterning of a photomask to print a contact, a via or curvilinear shape on an integrated circuit
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Application No.: US15234078Application Date: 2016-08-11
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Publication No.: US09927698B2Publication Date: 2018-03-27
- Inventor: Jed H. Rankin , Adam C. Smith
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Gibb & Riley, LLC
- Agent Michael J. LeStrange, Esq.
- Main IPC: G03F1/70
- IPC: G03F1/70 ; G03F1/78 ; G03F1/20 ; G03F7/20 ; H01L21/027 ; B82Y10/00 ; G06F17/50 ; B82Y40/00 ; H01J37/317

Abstract:
A method and system for: forming a first rectangular shape with photomask writing equipment, using a first sub-threshold dosage on a photoresist layer of a photomask substrate; forming an overlapping second rectangular shape with the photomask writing equipment using a second sub-threshold dosage on the photoresist layer, the second rectangular shape being rotated relative to the first rectangular shape to form one of: a hexagonal overlap area and an octagonal overlap area, that exposes the photoresist layer to at least a threshold dosage; and forming a photomask, based on developing the exposed photoresist layer, to provide optical transmission corresponding to the one of: the hexagonal overlap area of at least the threshold dosage and the octagonal overlap area of at least the threshold dosage, for use by a photolithography system to write any of a contact, a via, or a curvilinear shape on an integrated circuit substrate.
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