Method for manufacture of a semiconductor wafer suitable for the manufacture of an SOI substrate, and SOI substrate wafer thus obtained
Abstract:
A semiconductor wafer suitable for fabricating an SOI substrate is provided by: producing a first layer of polycrystalline semiconductor on a top side of a semiconductor carrier; then forming an interface zone on a top side of the first layer, wherein the interface zone has a structure different from a crystal structure of the first layer; and then producing a second layer of polycrystalline semiconductor on the interface zone.
Information query
Patent Agency Ranking
0/0