Invention Grant
- Patent Title: Method of manufacturing a layer structure having partially sealed pores
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Application No.: US15461500Application Date: 2017-03-17
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Publication No.: US09929111B2Publication Date: 2018-03-27
- Inventor: Martin Mischitz , Markus Heinrici , Barbara Eichinger , Manfred Schneegans , Stefan Krivec
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & PartnermbB
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L21/02 ; H01L23/532 ; H01L21/762

Abstract:
A method of manufacturing a layer structure includes: forming a first layer over a substrate; planarizing the first layer to form a planarized surface of the first layer; and forming a second layer over the planarized surface; wherein a porosity of the first layer is greater than a porosity of the substrate and greater than a porosity of the second layer; wherein the second layer is formed by physical vapor deposition; and wherein the first layer and the second layer are formed from the same solid material.
Public/Granted literature
- US20170194272A1 METHOD OF MANUFACTURING A LAYER STRUCTURE HAVING PARTIALLY SEALED PORES Public/Granted day:2017-07-06
Information query
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