Invention Grant
- Patent Title: High density capacitors formed from thin vertical semiconductor structures such as FinFETs
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Application No.: US15144657Application Date: 2016-05-02
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Publication No.: US09929147B2Publication Date: 2018-03-27
- Inventor: Zhonghai Shi , Marc L. Tarabbia
- Applicant: Cirrus Logic International Semiconductor Ltd.
- Applicant Address: US TX Austin
- Assignee: CIRRUS LOGIC, INC.
- Current Assignee: CIRRUS LOGIC, INC.
- Current Assignee Address: US TX Austin
- Agency: Norton Rose Fulbright US LLP
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L49/02 ; H01L27/08

Abstract:
A vertical structure may be manufactured in a substrate of an integrated circuit, and that vertical structure used to form a high density capacitance for the integrated circuit. These thin vertical structures can be configured to operate as an insulator in a capacitor. The vertical structures may be manufactured using three-dimensional semiconductor manufacturing technology, such as FinFET (fin field effect transistor) technology and manufacturing processes. The capacitors based on thin vertical structures may be integrated with other circuitry that can utilize the thin vertical structures, such as FinFET transistors.
Public/Granted literature
- US20160329321A1 HIGH DENSITY CAPACITORS FORMED FROM THIN VERTICAL SEMICONDUCTOR STRUCTURES SUCH AS FINFETS Public/Granted day:2016-11-10
Information query
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