公开(公告)号：US09929147B2

公开(公告)日：2018-03-27

申请号：US15144657

申请日：2016-05-02

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Zhonghai Shi ,  Marc L. Tarabbia

IPC: H01L27/06 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01L49/02 ,  H01L27/08

CPC classification number: H01L27/0629 ,  H01L21/823431 ,  H01L27/0805 ,  H01L28/86 ,  H01L28/90 ,  H01L29/66795 ,  H01L29/7851

Abstract: A vertical structure may be manufactured in a substrate of an integrated circuit, and that vertical structure used to form a high density capacitance for the integrated circuit. These thin vertical structures can be configured to operate as an insulator in a capacitor. The vertical structures may be manufactured using three-dimensional semiconductor manufacturing technology, such as FinFET (fin field effect transistor) technology and manufacturing processes. The capacitors based on thin vertical structures may be integrated with other circuitry that can utilize the thin vertical structures, such as FinFET transistors.

公开(公告)号：US20160329321A1

公开(公告)日：2016-11-10

申请号：US15144657

申请日：2016-05-02

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Zhonghai Shi ,  Marc L. Tarabbia

IPC: H01L27/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L49/02

CPC classification number: H01L27/0629 ,  H01L21/823431 ,  H01L27/0805 ,  H01L28/86 ,  H01L28/90 ,  H01L29/66795 ,  H01L29/7851

Abstract: A vertical structure may be manufactured in a substrate of an integrated circuit, and that vertical structure used to form a high density capacitance for the integrated circuit. These thin vertical structures can be configured to operate as an insulator in a capacitor. The vertical structures may be manufactured using three-dimensional semiconductor manufacturing technology, such as FinFET (fin field effect transistor) technology and manufacturing processes. The capacitors based on thin vertical structures may be integrated with other circuitry that can utilize the thin vertical structures, such as FinFET transistors.

Abstract translation: 可以在集成电路的基板中制造垂直结构，并且该垂直结构用于为集成电路形成高密度电容。 这些薄的垂直结构可以被配置为在电容器中作为绝缘体工作。 可以使用诸如FinFET（鳍场效应晶体管）技术和制造工艺的三维半导体制造技术来制造垂直结构。 基于薄垂直结构的电容器可以与可以利用诸如FinFET晶体管的薄垂直结构的其它电路集成。