A magnetic junction usable in a magnetic device is described. The magnetic junction includes a first reference layer, first and second spacer layers, a free layer and a self-initializing (SI) substructure. The first spacer layer is between the free and first reference layers. The free layer is switchable between stable magnetic states when a write current having at least a critical magnitude is passed through the magnetic junction. The second spacer layer is between the SI substructure and the free layer. The SI substructure is selected from first, second and third substructures. The first and second substructures include an SI reference layer having a magnetic moment switchable between the first and second directions when a current having a magnitude of not more than one-half of the critical magnitude is passed through the magnetic junction. The third substructure includes a temperature dependent reference layer.