A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.