公开(公告)号：US09932670B2

公开(公告)日：2018-04-03

申请号：US14149526

申请日：2014-01-07

Applicant: Applied Materials, Inc.

Inventor： Jie Su ,  Lori D. Washington ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Jacob Grayson ,  Sang Won Kang ,  Dong Hyung Lee ,  Hua Chung

IPC: B08B9/00 ,  B08B5/00 ,  C23C16/44 ,  C23C16/455 ,  H01L21/67

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23C16/45574 ,  H01L21/67115

Abstract: A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

公开(公告)号：US20180337021A1

公开(公告)日：2018-11-22

申请号：US16000469

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Sang Won Kang ,  Nicholas Celeste ,  Dmitry Lubomirsky ,  Peter Hillman ,  Douglas Brenton Hayden ,  Dongqing Yang

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32862

Abstract: Embodiments of the present disclosure generally provide improved methods for processing substrates with improved process stability, increased mean wafers between clean, and/or improved within wafer uniformity. One embodiment provides a method for seasoning one or more chamber components in a process chamber. The method includes placing a dummy substrate in the process chamber, flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate, and annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed.

公开(公告)号：US09659753B2

公开(公告)日：2017-05-23

申请号：US14454493

申请日：2014-08-07

Applicant: Applied Materials, Inc.

Inventor： Tae Cho ,  Sang Won Kang ,  Dongqing Yang ,  Raymond W. Lu ,  Peter Hillman ,  Nicholas Celeste ,  Tien Fak Tan ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/3255 ,  H01J37/32082

Abstract: A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.

公开(公告)号：US20160042920A1

公开(公告)日：2016-02-11

申请号：US14454493

申请日：2014-08-07

Applicant: Applied Materials, Inc.

Inventor： TAE CHO ,  Sang Won Kang ,  Dongqing Yang ,  Raymond W. Lu ,  Peter Hillman ,  Nicholas Celeste ,  Tien Fak Tan ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01J9/24

CPC classification number: H01J37/3255 ,  H01J37/32082

Abstract: A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.

Abstract translation: 等离子体源包括具有各自表面的第一电极和第二电极，以及在电极之间并与电极接触的绝缘体。 电极表面和绝缘体表面基本上限定等离子体腔。 绝缘体表面限定一个或多个凹槽，其构造成防止在绝缘体表面上以连续形式沉积材料。 产生等离子体的方法包括将一种或多种气体引入到由第一电极，与第一电极接触的绝缘体的表面和面对第一电极的第二电极限定的等离子体腔中。 绝缘体表面限定一个或多个凹槽，其中绝缘体表面的部分不暴露于空腔的中心区域。 该方法还包括在第一和第二电极之间提供RF能量以在空腔内产生等离子体。

公开(公告)号：US11164724B2

公开(公告)日：2021-11-02

申请号：US16000469

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Sang Won Kang ,  Nicholas Celeste ,  Dmitry Lubomirsky ,  Peter Hillman ,  Douglas Brenton Hayden ,  Dongqing Yang

IPC: H01J37/32

Abstract: Embodiments of the present disclosure generally provide improved methods for processing substrates with improved process stability, increased mean wafers between clean, and/or improved within wafer uniformity. One embodiment provides a method for seasoning one or more chamber components in a process chamber. The method includes placing a dummy substrate in the process chamber, flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate, and annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed.

公开(公告)号：US10008366B2

公开(公告)日：2018-06-26

申请号：US15259401

申请日：2016-09-08

Applicant: Applied Materials, Inc.

Inventor： Sang Won Kang ,  Nicholas Celeste ,  Dmitry Lubomirsky ,  Peter Hillman ,  Douglas Brenton Hayden ,  Dongqing Yang

IPC: H01L21/302 ,  H01L21/461 ,  H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32862

Abstract: Embodiments of the present disclosure generally provide improved methods for processing substrates with improved process stability, increased mean wafers between clean, and/or improved within wafer uniformity. One embodiment provides a method for seasoning one or more chamber components in a process chamber. The method includes placing a dummy substrate in the process chamber, flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate, and annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed.