Invention Grant
- Patent Title: SRAM bit-line and write assist apparatus and method for lowering dynamic power and peak current, and a dual input level-shifter
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Application No.: US15396341Application Date: 2016-12-30
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Publication No.: US09934844B2Publication Date: 2018-04-03
- Inventor: Hieu T. Ngo , Daniel J. Cummings
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard, & Mughal LLP
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/419 ; G11C5/06 ; G11C7/12 ; G06F17/50 ; G11C11/4074 ; G11C11/4096 ; G11C11/413

Abstract:
Described is an apparatus comprising a plurality of memory arrays, local write assist logic units, and read/write local column multiplexers coupled together in a group such that area occupied by the local write assist logic units and the read/write local column multiplexers in the group is smaller than it would be when global write assist logic units and the read/write global column multiplexers are used. Described is a dual input level-shifter with integrated latch. Described is an apparatus which comprises: a write assist pulse generator operating on a first power supply; one or more pull-up devices coupled to the write assist pulse generator, the one or more pull-up devices operating on a second power supply different from the first power supply; and an output node to provide power supply to a memory cell.
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