Invention Grant
- Patent Title: Method for fabricating a varistor device and varistor device
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Application No.: US15102645Application Date: 2014-11-13
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Publication No.: US09934892B2Publication Date: 2018-04-03
- Inventor: Dennis Sun , Jamie Jing , Qirong Li
- Applicant: EPCOS AG
- Applicant Address: DE Munich
- Assignee: EPCOS AG
- Current Assignee: EPCOS AG
- Current Assignee Address: DE Munich
- Agency: Slater Matsil, LLP
- Priority: CN201320859060U 20131224
- International Application: PCT/EP2014/074532 WO 20141113
- International Announcement: WO2015/096932 WO 20150702
- Main IPC: H01C7/10
- IPC: H01C7/10 ; H01C7/102 ; H01C1/142 ; H01C17/28 ; H01C17/30 ; H01C1/144
Abstract:
A method for fabricating a varistor device is presented. In an embodiment the method includes providing a base body for the varistor device, wherein the base body comprises a ceramic material, providing a basic material for a base metal electrode region on the base body, exposing the base body with the basic material to a temperature under a protective gas atmosphere such that the base metal electrode region is formed and firmly connected to the base body and completing the varistor device.
Public/Granted literature
- US20160307673A1 Method for Fabricating a Varistor Device and Varistor Device Public/Granted day:2016-10-20
Information query
