- 专利标题: Method for processing a carrier and an electronic component
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申请号: US15189060申请日: 2016-06-22
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公开(公告)号: US09934966B2公开(公告)日: 2018-04-03
- 发明人: Guenther Ruhl , Klemens Pruegl
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Viering, Jentschura & Partner mbB
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/768 ; H01L29/66 ; H01L29/778 ; H01L29/10 ; H01L29/16 ; H01L21/04 ; H01L21/225 ; H01L29/04 ; H01L29/06 ; H01L29/167
摘要:
In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.