Invention Grant
- Patent Title: Method for processing a silicon wafer
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Application No.: US15379243Application Date: 2016-12-14
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Publication No.: US09934988B2Publication Date: 2018-04-03
- Inventor: Werner Schustereder , Helmut Oefner , Hans-Joachim Schulze , Sandeep Walia
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102015121890 20151215
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L21/02 ; H01L21/223 ; H01L21/306 ; H01L21/265
Abstract:
Disclosed is a method for processing a semiconductor wafer. The method includes forming an oxygen containing region in the semiconductor wafer, wherein forming the oxygen containing region includes introducing oxygen via a first surface into the semiconductor wafer. The method further includes creating vacancies at least in the oxygen containing region and annealing at least the oxygen containing region in an annealing process so as to form oxygen precipitates.
Public/Granted literature
- US20170170028A1 Method for Processing a Silicon Wafer Public/Granted day:2017-06-15
Information query
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