Invention Grant
- Patent Title: Sequential circuit and semiconductor device
-
Application No.: US15344795Application Date: 2016-11-07
-
Publication No.: US09939692B2Publication Date: 2018-04-10
- Inventor: Shunpei Yamazaki , Hiroyuki Miyake , Kouhei Toyotaka , Masahiko Hayakawa , Daisuke Matsubayashi , Shinpei Matsuda
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2013-119037 20130605
- Main IPC: G02F1/1343
- IPC: G02F1/1343 ; G02F1/1362 ; G02F1/1333 ; G02F1/1368 ; H01L27/12 ; H01L29/786

Abstract:
The following semiconductor device provides high reliability and a narrower frame width. The semiconductor device includes a driver circuit and a pixel portion. The driver circuit has a first transistor including a first gate and a second gate electrically connected to each other with a semiconductor film sandwiched therebetween, and a second transistor electrically connected to the first transistor. The pixel portion includes a third transistor, a liquid crystal element, and a capacitor. The liquid crystal element includes a first transparent conductive film electrically connected to the third transistor, a second conductive film, and a liquid crystal layer. The capacitor includes the first conductive film, a third transparent conductive film, and a nitride insulating film. The nitride insulating film is positioned between the first transparent conductive film and the third transparent conductive film, and positioned between the semiconductor film and the second gate of the first transistor.
Public/Granted literature
- US20170052415A1 SEQUENTIAL CIRCUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2017-02-23
Information query
IPC分类: