A method of making a semiconductor device comprising the steps of providing a first manufacturing line, providing a second manufacturing line, and forming a first redistribution interconnect structure using the first manufacturing line while forming a second redistribution interconnect structure using the second manufacturing line. The method further includes the steps of testing a first unit of the first redistribution interconnect structure to determine a first known good unit (KGU), disposing a known good semiconductor die (KGD) over the first KGU of the first redistribution interconnect structure, and dicing the first KGU and KGD from the first redistribution interconnect structure. The method further includes the steps of testing a unit of the second redistribution interconnect structure to determine a second KGU of the second redistribution interconnect structure and disposing first KGU of the first redistribution interconnect structure and the KGD over the second KGU of the second redistribution interconnect structure.