Power semiconductor device including well extension region and field-limiting rings
摘要:
A drift region has a first conductivity type. A well region is at least partially included in an interface area, has an end portion between the interface area and an edge termination area, and has a second conductivity type. An extension region extends outward from the well region, is shallower than the well region, and has the second conductivity type. A plurality of field-limiting rings are provided outside the extension region in the edge termination area. Each of the field-limiting rings together with the drift region located on the inner side forms a unit structure. The field-limiting ring located closer to the outside has a lower proportion of a width to a width of the unit structure. The unit structure located closer to the outside has a lower average dose.
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