发明授权
- 专利标题: Power semiconductor device including well extension region and field-limiting rings
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申请号: US15030714申请日: 2014-01-29
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公开(公告)号: US09941269B2公开(公告)日: 2018-04-10
- 发明人: Katsumi Nakamura
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 国际申请: PCT/JP2014/051910 WO 20140129
- 国际公布: WO2015/114748 WO 20150806
- 主分类号: H01L27/02
- IPC分类号: H01L27/02 ; H01L29/06 ; H01L29/10 ; H01L29/08 ; H01L29/739 ; H01L29/423 ; H01L29/40
摘要:
A drift region has a first conductivity type. A well region is at least partially included in an interface area, has an end portion between the interface area and an edge termination area, and has a second conductivity type. An extension region extends outward from the well region, is shallower than the well region, and has the second conductivity type. A plurality of field-limiting rings are provided outside the extension region in the edge termination area. Each of the field-limiting rings together with the drift region located on the inner side forms a unit structure. The field-limiting ring located closer to the outside has a lower proportion of a width to a width of the unit structure. The unit structure located closer to the outside has a lower average dose.
公开/授权文献
- US20160260703A1 POWER SEMICONDUCTOR DEVICE 公开/授权日:2016-09-08
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