Invention Grant
- Patent Title: Amplifier bias circuit
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Application No.: US14598612Application Date: 2015-01-16
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Publication No.: US09941842B2Publication Date: 2018-04-10
- Inventor: Shu-Hsien Liao , Feipeng Wang , Cheng-Han Wang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Procopio, Cory, Hargreaves
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/02 ; H03F3/19 ; H03F3/21 ; H03F1/22 ; H03F1/32 ; H03F3/24

Abstract:
A power amplifier bias circuit having high dynamic range and low memory is disclosed. In an exemplary embodiment, an apparatus includes an output stage configured to generate a biased RF signal based on a first DC signal and a filtered signal. The apparatus also includes a low pass filter configured to filter the biased RF signal to generate the filtered signal.
Public/Granted literature
- US20160211804A1 AMPLIFIER BIAS CIRCUIT Public/Granted day:2016-07-21
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