Invention Grant
- Patent Title: Flash memory
-
Application No.: US15432228Application Date: 2017-02-14
-
Publication No.: US09947409B2Publication Date: 2018-04-17
- Inventor: Ken Matsubara , Takashi Iwase , Satoru Nakanishi
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2016-026690 20160216
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/08 ; G11C16/04 ; H03K3/356

Abstract:
In order to reduce the manufacturing cost, a flash memory includes a memory cell array formed by a plurality of memory cells arranged in a matrix shape; a plurality of word lines provided in each column of the memory cell array; a first word line driver that outputs a first voltage group to each of the word lines; and a second word line driver that outputs a second voltage group to each of the word lines together with the first word line driver.
Public/Granted literature
- US20170236587A1 FLASH MEMORY Public/Granted day:2017-08-17
Information query